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    Graphene on SiC record

    less than 1 minute read

    Published: February 06, 2025

    Content

    • A substitutional quantum defect in WS2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation
    • Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures
    • Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study†
    • Graphene growth on silicon carbide: A review
    • 2D Covalent Moiré Superlattice from Fluorinating Twisted Bilayer Graphene

    A substitutional quantum defect in WS2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation

    Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures

    Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study†

    Graphene growth on silicon carbide: A review

    2D Covalent Moiré Superlattice from Fluorinating Twisted Bilayer Graphene

    Tags: Graphene, record, SiC

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